SEMICONDUCTOR
TECHNICAL DATA
FOR HIGH SPEED SWITCHING.
KDR582S
SCHOTTKY BARRIER TYPE DIODE
FEATURES
・Low
reverse current, low capacitance.
L
E
B
L
2
A
G
H
1
3
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Reverse Voltage
Forward Current
Junction Temperature
Storage Temperature Range
SYMBOL
V
R
V
R
I
F
T
j
T
stg
RATING
4
4
130
150
-55½150
UNIT
P
P
V
C
N
V
mA
℃
℃
M
K
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
Lot No.
Type Name
MC
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
I
F
=0.1mA
Forward Voltage
V
F
I
F
=1mA
I
F
=10mA
Reverse Current
Total Capacitance
Series Resistance
I
R
C
T
r
S
V
R
=3V
V
R
=3V, T
A
=60℃
V
R
=0V, f=1MHz
I
F
=5mA, f=10kHz
MIN.
0.2
0.25
0.35
-
-
0.4
-
TYP.
-
-
-
-
-
-
-
MAX.
0.35
0.45
0.6
0.25
1.25
0.75
15
μ
A
pF
V
UNIT
J
D
Ω
2009. 12. 9
Revision No : 0
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
