SEMICONDUCTOR
TECHNICAL DATA
High frequency rectification
(Switching regulators, converters, choppers)
L
KDR505S
SCHOTTKY BARRIER TYPE DIODE
E
B
L
FEATURES
Low Forward Voltage : V
F
max=0.55V.
A
G
DIM
A
2
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
Low Leakage Current : I
R
max=20 A.
3
D
B
C
D
E
G
H
J
K
H
1
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Non-repetitive Peak Surge Current
Junction Temperature
Storage Temperature
)
SYMBOL
V
RRM
V
R
I
O
I
FSM
T
j
T
stg
RATING
50
50
0.5
5
125
-55 125
UNIT
V
V
A
A
C
N
P
P
L
M
N
P
M
3
1. NC
2. ANODE
3. CATHODE
2
1
K
SOT-23
Marking
Lot No.
Type Name
DM
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Reverse Voltage
Forward Voltage
Reverse Current
Total Capacitance
SYMBOL
V
R
V
F
I
R
C
T
TEST CONDITION
I
R
=200 A
I
F
=0.5A
V
R
=25V
V
R
=10V, f=1MHz
MIN.
50
-
-
-
TYP.
-
-
-
22
MAX.
-
0.55
20
-
UNIT
V
V
A
pF
2003. 2. 25
Revision No : 1
J
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
