SEMICONDUCTOR
TECHNICAL DATA
LOW POWER RECTIFICATION
FOR SWITCHING POWER SUPPLY.
FEATURES
Small Surface Mounting Type. (USM)
A
E
M
B
KDR411
SCHOTTKY BARRIER TYPE DIODE
M
D
3
Low Forward Voltage : V
F
max=0.5V
High Reliability
2
1
CONSTRUCTION
Silicon epitaxial planar.
C
H
N
K
N
DIM
A
B
C
D
E
G
H
J
K
L
M
N
MILLIMETERS
_
2.00 + 0.20
_ 0.15
1.25 +
_
0.90 + 0.10
0.3+0.10/-0.05
_
2.10 + 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
_
0.42 + 0.10
0.10 MIN
J
L
G
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Peak Reverse Voltage
DC Reverse Voltage
Average Forward Current
Peak Forward Surge Current
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
RM
V
R
I
O
I
FSM
T
j
T
stg
RATING
40
20
0.5
3
125
-40 +125
UNIT
V
V
A
A
1. NC
2. ANODE
3. CATHODE
2
3
1
USM
Marking
U3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Forward Voltage
Reverse Current
Total Capacitance
SYMBOL
V
F
(1)
V
F
(2)
I
R
C
T
TEST CONDITION
I
F
=10mA
I
F
=500mA
V
R
=10V
V
R
=10V, f=1MHz
MIN.
-
-
-
-
TYP.
-
-
-
20
MAX.
0.3
0.5
30
-
UNIT
V
V
A
pF
2003. 2. 24
Revision No : 3
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
