SEMICONDUCTOR
TECHNICAL DATA
HIGH SPEED SWITCHING.
KDR378E
SCHOTTKY BARRIER TYPE DIODE
FEATURES
Low Forward Voltage : V
F
=0.24(Typ.) I
F
=5mA
2
A
G
1
E
B
D
3
DIM
A
B
C
D
E
G
H
MILLIMETERS
_
1.60 + 0.10
_
+ 0.10
0.85
_
0.70 + 0.10
0.27+0.10/-0.05
_
1.60 + 0.10
+ 0.10
1.00 _
0.50
_
0.13 + 0.05
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Non-repetitive Peak Surge Current
Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
RRM
V
R
I
O
I
FSM
P
D
T
j
T
stg
RATING
15
10
0.1
1
100
125
-55 125
UNIT
V
V
A
A
mW
1. ANODE 1
2. ANODE 2
3. CATHODE
J
C
H
J
3
2
1
ESM
Marking
X3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
V
F(1)
Forward Voltage
V
F(2)
V
F(3)
Reverse Current
Total Capacitance
I
R
C
T
I
F
=1mA
I
F
=5mA
I
F
=100mA
V
R
=10V
V
R
=0V, f=1MHz
TEST CONDITION
MIN.
-
-
-
-
-
TYP.
0.19
0.24
0.39
-
14
MAX.
-
-
0.50
20
30
A
pF
V
UNIT
2001. 6. 7
Revision No : 1
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
