SEMICONDUCTOR
KDR367E
SCHOTTKY BARRIER TYPE DIODE
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
C
E
Low Forward Voltage : VF(2)=0.23V (Typ.)
Small Package : ESC.
1
2
D
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
F
SYMBOL
VRM
VR
RATING
15
UNIT
V
DIM MILLIMETERS
_
Maximum (Peak) Reverse Voltage
Reverse Voltage
A
B
C
D
E
F
1.60+0.10
_
1.20+0.10
10
V
_
0.80+0.10
_
0.30+0.05
IFM
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10ms)
200
mA
mA
A
_
+
0.60 0.10
_
+
0.13 0.05
1. ANODE
IO
100
2. CATHODE
IFSM
PD
1
Power Dissipation
150*
125
mW
Tj
Junction Temperature
ESC
Tstg
Storage Temperature Range
-55 125
* : Mounted on a glass epoxy circuit board of 20 20mm,
pad dimension of 4 4mm.
Marking
Type Name
U S
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
VF(1)
VF(2)
VF(3)
IR
TEST CONDITION
MIN.
TYP.
0.18
0.23
0.35
-
MAX.
-
UNIT
V
IF=1mA
IF=5mA
-
-
-
-
-
Forward Voltage
0.30
0.50
20
IF=100mA
VR=10V
Reverse Current
A
CT
VR=0V, f=1MHz
Total Capacitance
20
40
pF
2003. 2. 25
Revision No : 1
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
