SEMICONDUCTOR
KDR357
SCHOTTKY BARRIER TYPE DIODE
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
G
B
1
FEATURES
· Low Forward Voltage : VF(3)=0.43V(Typ.)
· Low Reverse Current : IR=5㎂(Max.)
· Small Package : USC.
H
2
J
D
C
I
DIM
A
MILLIMETERS
_
2.50+0.1
MAXIMUM RATING (Ta=25℃)
_
+
1.25 0.05
_
B
C
D
E
+
0.90 0.05
CHARACTERISTIC
SYMBOL RATING UNIT
0.30+0.06/-0.04
_
M
M
+
1.70 0.05
VRM
VR
IFM
IO
Maximum (Peak) Reverse Voltage
Reverse Voltage
45
40
V
V
MIN 0.17
_
F
G
H
I
+
0.126 0.03
1. ANODE
0~0.1
1.0 MAX
_
2. CATHODE
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10ms)
200
mA
mA
A
+
J
0.15 0.05
_
0.4+0.05
K
L
100
2
+4/-2
4~6
M
IFSM
PD
1
Power Dissipation
200*
125
mW
℃
USC
Tj
Junction Temperature
Tstg
Storage Temperature Range
-55∼ 125
℃
* : Mounted on a glass epoxy circuit board of 20×20mm,
pad dimension of 4×4mm.
Marking
Lot No.
UL
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
VF(1)
VF(2)
VF(3)
IR
TEST CONDITION
MIN.
TYP.
0.24
0.31
0.43
-
MAX.
UNIT
V
IF=1mA
-
-
-
-
-
-
IF=10mA
Forward Voltage
-
0.55
5
IF=100mA
VR=40V
Reverse Current
μA
CT
VR=0V, f=1MHz
Total Capacitance
30
-
pF
2009. 9. 7
Revision No : 5
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
