SEMICONDUCTOR
KDR331V
SCHOTTKY BARRIER TYPE DIODE
TECHNICAL DATA
HIGH SPEED SWITCHING.
FEATURES
ᴌLow Forward Voltage : VF=0.25(Typ.) @IF=5mA
ᴌVery Small Package : VSM.
E
B
DIM MILLIMETERS
2
1
_
A
B
C
D
E
G
H
J
1.2 +0.05
_
0.8 +0.05
3
_
0.5+0.05
_
0.3+0.05
MAXIMUM RATING (Ta=25ᴱ)
_
1.2+0.05
_
0.8+0.05
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
SYMBOL
RATING
15
UNIT
V
0.40
P
P
_
0.12+0.05
VRM
VR
IFM
IO
_
K
P
0.2+0.05
5
10
V
Maximum (Peak) Forward Current
Average Forward Current
100 *
50 *
mA
mA
A
3
1. ANODE 1
2. ANODE 2
3. CATHODE
IFSM
PD
Surge Current (10ms)
1 *
2
1
Power Dissipation
100
mW
ᴱ
Tj
Junction Temperature
125
VSM
Tstg
Topr
Storage Temperature Range
Operating Temperature Range
* : Unit Rating. Total Rating=Unit Ratingᴧ1.5
-55ᴕ125
-40ᴕ100
ᴱ
ᴱ
Marking
Type Name
UW
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
-
UNIT
V
VF(1)
VF(2)
VF(3)
IR
IF=1mA
IF=5mA
-
-
-
-
-
0.21
0.25
0.35
-
Forward Voltage
0.30
0.50
20
IF=50mA
VR=10V
Reverse Current
ỌA
CT
VR=0V, f=1MHz
Total Capacitance
13
40
pF
2001. 7. 25
Revision No : 0
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
