SEMICONDUCTOR
TECHNICAL DATA
High frequency rectification
(Switching regulators, converters, choppers)
E
M
B
KDR105
SCHOTTKY BARRIER TYPE DIODE
M
D
3
FEATURES
A
Low Forward Voltage : V
F
max=0.55V.
Low Leakage Current : I
R
max=10 A.
2
J
1
C
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Non-repetitive Peak Surge Current
Junction Temperature
Storage Temperature
SYMBOL
V
RRM
V
R
I
O
I
FSM
T
j
T
stg
RATING
50
50
0.1
2
125
-55 125
UNIT
V
V
A
A
L
MAXIMUM RATING (Ta=25
)
H
N
K
N
DIM
A
B
C
D
E
G
H
J
K
L
M
N
MILLIMETERS
_
2.00 + 0.20
_ 0.15
1.25 +
_
0.90 + 0.10
0.3+0.10/-0.05
_
2.10 + 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
_
0.42 + 0.10
0.10 MIN
G
3
1. NC
2. ANODE
3. CATHODE
2
1
USM
Marking
DL
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Reverse Voltage
Forward Voltage
Reverse Current
Total Capacitance
SYMBOL
V
R
V
F
I
R
C
T
I
R
=50 A
I
F
=0.1A
V
R
=25V
V
R
=10V, f=1MHz
TEST CONDITION
MIN.
50
-
-
-
TYP.
-
-
-
7.7
MAX.
-
0.55
10
-
UNIT
V
V
A
pF
2003. 2. 25
Revision No : 2
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
