SEMICONDUCTOR
TECHNICAL DATA
For antenna switches in mobile applications.
FEATURES
Array type (4 Diode in one package)
Low Capacitance
Low Series resistance
A
KDP610UL
SILICON EPITAXIAL PIN TYPE DIODE
TENTATIVE
D
1
4
B
8
C
5
TOP VIEW
BOTTOM VIEW
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Reverse Voltage
Forward Current
Junction Temperature
Storage Temperature Range
SYMBOL
V
R
I
F
T
j
T
stg
RATING
30
100
150
-55 150
UNIT
V
F
G
mA
SIDE VIEW
DIM
A
B
C
D
E
F
G
MILLIMETERS
_
1.80
+
0.05
_
1.20
+
0.05
_
0.20
+
0.05
_
0.40
+
0.05
_
0.25
+
0.05
_
0.45
+
0.05
Max 0.5
ULP-8
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Reverse Current
Forward Voltage
Total Capacitance
Series Resistance
ESD-Capability *
* Failure cirterion : I
R
>100nA at V
R
=30V.
SYMBOL
I
R
V
F
C
T
r
s
-
TEST CONDITION
V
R
=30V
I
F
=10mA
V
R
=1V, f=1MHz
I
F
=10mA, f=100MHz
C=200pF, R=0 ,
Both forward and reverse
direction 1 pulse
MIN.
-
-
-
-
100
TYP.
-
-
-
-
-
MAX.
0.1
1.0
0.30
1.3
-
UNIT
A
V
pF
2008. 1. 22
Revision No : 0
E
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
