SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
・Average
Forward Current : I
O
=50A.
・Repetive
Peak Reverse Voltage : V
RRM
=200V
E50A2CBS, E50A2CBR
STACK SILICON DIFFUSED DIODE
A
POLARITY
E50A2CBS
(+ Type)
E50A2CBR
(- Type)
K
H
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Average Forward Current
Peak 1 Cycle Surge Current
Repetitive Peak Revese Voltage
Junction Temperature
Storage Temperature Range
SYMBOL
I
F(AV)
I
FSM
V
RRM
T
j
T
stg
RATING
50
380 (60Hz)
200
-40�½�215
-40�½�215
UNIT
A
A
V
℃
℃
G
B
J D
F
E I
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
Φ11.5
MAX
Φ12.75+0.09-0.00
_
Φ1.3
+ 0.04
_
4.2+ 0.2
_
8.0 + 0.2
TYP 0.5
_
Φ10.0
+ 0.2
_
0.4+ 0.1x45
8.5 MAX
0.2+0.1
_
28.35+ 0.5
B-PF
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Forward Voltage
Reverse Voltage
Reverse Current
Transient Thermal Resistance
Reverse Leakage Current Under
High Temperature
Reverse Recovery Time
Temperature Resistance
SYMBOL
V
F
V
R
I
R
ΔV
F
HI
R
t
rr
R
th
TEST CONDITION
I
FM
=100A
I
R
=5mA
V
R
=200V
I
FM
=100A, I
M
=100mA, Pw=100ms
Ta=150℃, V
R
=200V
I
F
=100mA, I
R
=100mA
DC total Junction to case
MIN.
-
200
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
MAX.
1.05
-
50
80
2.5
15
0.6
UNIT
V
V
μ
A
mV
mA
μ
s
℃/W
2002. 4. 9
Revision No : 2
1/1
KEC [ KEC(KOREA ELECTRONICS) ]
