SEMICONDUCTOR
E50A2CS, E50A2CR
STACK SILICON DIFFUSED DIODE
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
· Average Forward Current : IO=50A.
· Repetitive Peak Reverse Voltage : VRRM=200V.
POLARITY
E50A2CS (+ Type)
E50A2CR (- Type)
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Average Forward Current
Peak 1 Cycle Surge Current
Junction Temperature
SYMBOL
VRRM
IF(AV)
IFSM
RATING
200
UNIT
V
50
A
600 (50Hz)
-40∼ 190
-40∼ 150
A
Tj
℃
℃
Tstg
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Peak Forward Voltage
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
1.05
50
UNIT
V
VFM
IRRM
trr
IFM=100A
-
-
-
-
-
-
-
-
VRRM=200V
Repetitive Peak Reverse Current
Reverse Recovery Time
μA
IF=0.1A, IR=0.1A
DC total junction to case
15
μS
Rth
Temperature Resistance
1.0
℃/W
2010. 1. 28
Revision No : 0
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
