SEMICONDUCTOR
E50A2CPS, E50A2CPR
STACK SILICON DIFFUSED DIODE
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
F2
D
FEATURES
· Average Forward Current : IO=50A.
· Reverse Voltage : 200V(Min.)
E
F1
POLARITY
E50A2CPS (+ Type)
E50A2CPR (- Type)
A
DIM MILLIMETERS
DIM MILLIMETERS
Φ11.7+0.1/-0
3.85+0/-0.2
F1
F2
G
0.32
3.1
A
B
MAXIMUM RATING (Ta=25℃)
_
0.5
Φ1.45+ 0.1
D
E
L1
8.4 MAX
1.55
CHARACTERISTIC
Average Forward Current
Peak 1 Cycle Surge Current
Repetitive Peak Reverse Voltage
Junction Temperature
SYMBOL
IF(AV)
IFSM
RATING
50
UNIT
A
DIM TYPE POLARITY MILLIMETERS
17.5+0/-1.5
S
L2
R
21.5+0/-1.5
500 (60Hz)
200
A
VRRM
Tj
V
H-PF
-40∼ 200
-40∼ 200
℃
℃
Tstg
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Forward Voltage
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
1.05
-
UNIT
V
VF
VR
IR
IFM=100A
-
200
-
-
-
-
IR=5mA
Reverse Voltage
Reverse Current
V
VR=200V
50
μA
IFM=100A, IM=100mA,
Pw=100ms
VF
trr
Transient Thermal Resistance
-
-
-
-
-
-
130
15
mV
μs
IF=100mA, IRP=100mA
Reverse Recovery Time
Reverse Leakage Current Under
High Temperature
HIR
Ta=150℃, VR=200V
2.5
mA
Junction to Base
Junction to Fin
-
-
-
-
0.8
1.0
Rth
Temperature Resistance
℃/W
2005. 3. 7
Revision No : 0
1/1
KEC [ KEC(KOREA ELECTRONICS) ]