SEMICONDUCTOR
E35A37VBS, E35A37VBR
STACK SILICON DIFFUSED DIODE
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
A
ᴌAverage Forward Current : IO=35A.
ᴌZener Voltage : 37V(Typ.)
DIM MILLIMETERS
POLARITY
E35A37VBS (+ Type)
A
B
C
D
E
F
G
H
I
Φ11.5 MAX
Φ12.75+0.09-0.00
_
+
Φ1.3 0.04
_
4.2+ 0.2
E35A37VBR (- Type)
_
8.0+0.2
K
TYP 0.5
_
+
Φ10.0 0.2
_
+
0.4 0.1x45
8.5 MAX
0.2+0.1
_
+
28.35 0.5
H
J
K
MAXIMUM RATING (Ta=25ᴱ)
I
E
D
J
CHARACTERISTIC
Average Forward Current
Peak 1 Cycle Surge Current
SYMBOL
IF(AV)
RATING
35
UNIT
A
F
G
B
IFSM
300 (60Hz)
A
Repetitive Peak
Reverse Surge Current
(Pulse width=10mS)
IRSM
35
34
A
V
B-PF
Transient Peak Reverse
Voltage
VRSM
VRM
Tj
Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
32
V
-40ᴕ215
-40ᴕ215
ᴱ
ᴱ
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL
Forward Voltage
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
VF
VZ
IFM=100A
-
34
-
-
37
-
1.15
40
10
70
55
-
V
V
IZ=10mA
VR=32V
Zener Voltage
IR
Reverse Current
ỌA
IFM=100A, IM=100mA, Pw=100mS
Irsm=35A, Pw=10mS
IZ=10mA
Transient Thermal Resistance
Breakdown Voltage
Temperature Coefficient
ẤVF
Vbr
-
-
mV
V
-
-
ề
T
-
27
mV/ᴱ
Reverse Leakage Current Under
High Temperature
HIR
Rth
Ta=150ᴱ, VR=32V
-
-
-
-
100
0.8
ỌA
Temperature Resistance
DC total junction to case
ᴱ/W
2002. 1. 30
Revision No : 1
1/1
KEC [ KEC(KOREA ELECTRONICS) ]