SEMICONDUCTOR
E35A2CBS, E35A2CBR
STACK SILICON DIFFUSED DIODE
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
A
·Average Forward Current : IO=35A.
·Repetive Peak Reverse Voltage : VRRM=200V
DIM MILLIMETERS
POLARITY
A
B
C
D
E
F
Φ11.5 MAX
Φ12.75+0.09-0.00
E35A2CBS E35A2CBR
_
+
Φ1.3 0.04
_
4.2+ 0.2
(+ Type)
(- Type)
_
8.0+0.2
K
TYP 0.5
_
+
Φ10.0 0.2
G
H
I
_
+
0.4 0.1x45
8.5 MAX
H
J
0.2+0.1
_
+
28.35 0.5
K
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
I
E
D
J
SYMBOL
IF(AV)
IFSM
RATING
35
UNIT
A
F
G
B
Average Forward Current
Peak 1 Cycle Surge Current
Repetitive Peak Revese Voltage
Junction Temperature
300 (60Hz)
200
A
VRRM
Tj
V
-40∼215
-40∼215
℃
℃
B-PF
Tstg
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Forward Voltage
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
1.10
-
UNIT
VF
VR
IFM=100A
-
200
-
-
-
-
-
V
V
IR=5mA
Reverse Voltage
IR
VR=200V
Reverse Current
50
μA
mV
IFM=100A, IM=100mA, Pw=100ms
Transient Thermal Resistance
ΔVF
-
100
Reverse Leakage Current Under
High Temperature
HIR
Ta=150℃, VR=200V
-
-
2.5
mA
trr
IF=0.1A, IR=0.1A
Reverse Recovery Time
Temperature Resistance
-
-
-
-
15
μs
Rth
DC total Junction to case
0.8
℃/W
2002. 4. 9
Revision No : 2
1/1
KEC [ KEC(KOREA ELECTRONICS) ]