SEMICONDUCTOR
E35A23VS, E35A23VR
STACK SILICON DIFFUSED DIODE
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
A3
A2
A1
D3
FEATURES
ᴌAverage Forward Current : IO=35A.
ᴌZener Voltage : 23V(Typ.)
POLARITY
E35A23VS E35A23VR
(+ Type) (- Type)
E
F
G
DIM MILLIMETERS DIM MILLIMETERS
MAXIMUM RATING (Ta=25ᴱ)
_
_
+
5.0 0.3
A1
A2
A3
B1
B2
C1
C2
D1
10.0+0.3
D2
D3
E
F
G
_
_
+
+
13.5 0.3
4.5 0.3
CHARACTERISTIC
Average Forward Current
Peak 1 Cycle Surge Current
SYMBOL
IF(AV)
RATING
35
UNIT
A
_
_
+
+
24.0 0.5
1.9 0.3
_
_
+
+
8.5 0.3
9.0 0.3
_
_
+
+
10.0 0.3
1.0 0.3
_
_
+
+
2.0 0.3
H
4.4 0.5
IFSM
_
_
450 (50Hz)
A
+
+
5.0 0.3
T
0.6 0.3
_
+
2.5 0.3
Peak Reverse Surge Current
(IRSM/2=10ms)
IRSM
70
A
VRSM
VRM
Tj
MR
Peak Revese Over Voltage
Peak Revese Voltage
70
V
V
17
Junction Temperature
-40ᴕ200
-40ᴕ150
ᴱ
ᴱ
Tstg
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
Peak Forward Voltage
SYMBOL
VFM
TEST CONDITION
MIN.
TYP.
MAX.
1.05
26
UNIT
V
IFM=100A
-
20
-
-
23
-
VZ
IZ=10mA
Zener Voltage
V
IRRM
VR=VRM
Repetitive Peak Reverse Curren
Transient Thermal Resistance
10
ỌA
mV
IRRM
IFM=100A, Pw=100mS
-
-
90
Reverse Leakage Current Under
High Temperature
HIR
Trr
Ta=150ᴱ, VR=VRM
-
-
-
-
2.5
5.0
mA
IF=100mA, -IR=100mA
90% Recovery Point
Reverse recovery Time
ỌS
Temperature Resistance
Thermal runway Temperature
Temperature Coefficient
Rth
DC total junction to case
VR=17V, IR=5mA
IR=10mA
-
200
-
-
-
1.0
ᴱ/W
ᴱ
Trwy
-
-
ề
T
18
mV/ᴱ
2001. 2. 8
Revision No : 0
1/1
KEC [ KEC(KOREA ELECTRONICS) ]