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E35A21VBR 参数 Datasheet PDF下载

E35A21VBR图片预览
型号: E35A21VBR
PDF下载: 下载PDF文件 查看货源
内容描述: 堆栈硅扩散二极管(交流发电机二极管,汽车) [STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE)]
分类和应用: 二极管电机LTE
文件页数/大小: 1 页 / 198 K
品牌: KEC [ KEC(KOREA ELECTRONICS) ]
   
SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
・Average
Forward Current : I
O
=35A.
・Zener
Voltage : 21V(Typ.)
E35A21VBS, E35A21VBR
STACK SILICON DIFFUSED DIODE
A
POLARITY
E35A21VBS (+ Type) : Mark : ZG
E35A21VBR (- Type) : Mark : ZA
K
H
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Average Forward Current
Peak 1 Cycle Surge Current
Non-Repetitive Peak
Reverse Surge Current
(10mS)
Transient Peak Reverse Voltage
Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
SYMBOL
I
F(AV)
I
FSM
I
RSM
V
RSM
V
RM
T
j
T
stg
RATING
35
300 (60Hz)
42
19
16
-40�½�215
-40�½�215
UNIT
A
A
A
G
B
J D
F
E I
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
Φ11.5
MAX
Φ12.75+0.09-0.00
_
Φ1.3
+ 0.04
_
4.2+ 0.2
_
8.0 + 0.2
TYP 0.5
_
Φ10.0
+ 0.2
_
0.4+ 0.1x45
8.5 MAX
0.2+0.1
_
28.35+ 0.5
B-PF
V
V
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Peak Forward Voltage
Zener Voltage
Reverse Current
Transient Thermal Resistance
Breakdown Voltage
Temperature Coefficient
Reverse Leakage Current Under
High Temperature
Temperature Resistance
SYMBOL
V
F
V
Z
I
R
ΔV
F
V
br
α
T
HI
R
R
th
TEST CONDITION
I
FM
=100A
I
Z
=10mA
V
R
=18V
I
FM
=100A, I
M
=100mA, Pw=100mS
I
rsm
=42A, Pw=10mS
I
Z
=10mA
Ta=150℃, V
R
=18V
DC total junction to case
MIN.
-
19
-
-
-
-
-
-
TYP.
-
21
-
-
-
15.7
-
-
MAX.
1.10
23
1
70
32
-
100
0.8
UNIT
V
V
μ
V
mV
V
mV/℃
μ
A
℃/W
2002. 4. 16
Revision No : 4
1/1