SEMICONDUCTOR
E30A2CS, E30A2CR
STACK SILICON DIFFUSED DIODE
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
A3
A2
A1
D3
FEATURES
Average Forward Current : IO=30A.
Repetitive Peak Reverse Voltage : VRRM=200V.
POLARITY
E30A2CS (+ Type)
E30A2CR (- Type)
E
F
G
DIM MILLIMETERS DIM MILLIMETERS
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
_
10.0+0.3
_
+
A1
A2
A3
B1
B2
C1
C2
D1
D2
D3
E
5.0 0.3
_
_
+
+
13.5 0.3
4.5 0.3
SYMBOL
VRRM
IF(AV)
IFSM
RATING
200
UNIT
V
_
_
+
24.0 0.5
_
+
1.9 0.3
_
+
8.5 0.3
_
+
9.0 0.3
_
F
Repetitive Peak Reverse Voltage
Average Forward Current
Peak 1 Cycle Surge Current
Junction Temperature
+
10.0 0.3
_
+
1.0 0.3
_
G
+
2.0 0.3
+
4.4 0.5
H
30
A
_
+
5.0 0.3
_
+
0.6 0.3
T
_
2.5+0.3
350 (50Hz)
-40 150
-40 150
A
Tj
MR
Tstg
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Peak Forward Voltage
SYMBOL
VFM
TEST CONDITION
MIN.
TYP.
MAX.
1.2
UNIT
V
IFM=100A
-
-
-
-
-
-
-
-
IRRM
trr
VRRM=200V
Repetitive Peak Reverse Current
Reverse Recovery Time
50
A
IF=0.1A, IR=0.1A
DC total junction to case
15
S
Rth
Temperature Resistance
1.0
/W
2002. 10. 9
Revision No : 2
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
