SEMICONDUCTOR
E30A2CDS, E30A2CDR
STACK SILICON DIFFUSED DIODE
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
E
F
FEATURES
Average Forward Current : IO=30A.
Reverse Voltage : 200V(Min)
POLARITY
E30A2CDS E30A2CDR
G
(+ Type)
(- Type)
B
A
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
DIM MILLIMETERS DIM MILLIMETERS
_
+
3.1 0.1
_
+
9.5 0.2
A
B
C
D
E
F
_
+
8.4 0.2
SYMBOL
VRRM
RATING
200
UNIT
V
Φ1.5
1.2
1
G
R0.5
_
Repetitive Peak Reverse Voltage
Average Forward Current
+
L1
5
0.4
POLARITY
MILLIMETERS
DIM TYPE
IF(AV)
30
A
_
19.0+1.0
S
L2
_
+
23.0 1.0
R
300
IFSM
Peak 1 Cycle Surge Current
A
(10ms Condition)
PD
Tj
Junction Temperature
-40 200
-40 200
Tstg
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Peak Forward Voltage
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
1.20
-
UNIT
VFM
VRM
IRRM
trr
IFM=100A
IR=5mA
-
200
-
-
-
-
-
V
V
A
S
Reverse Voltage
VR=200V
IF=-IR 100mA
Repetitive Peak Reverse Current
Reverse Recovery Time
50
-
15
Reverse Leakage Current Under
High Temperature
HIR
Rth
Ta=150 , VR=VRM
Junction to case
-
-
-
2.5
-
mA
/W
Temperature Resistance
1.0
2002. 10. 9
Revision No : 1
1/1
KEC [ KEC(KOREA ELECTRONICS) ]