SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : I
O
=30A.
E30A27VS, E30A27VR
STACK SILICON DIFFUSED DIODE
A3
A2
D3
A1
D1
D2
B1
E
F
POLARITY
E30A27VS
(+ Type)
E30A27VR
(- Type)
T
C2
H
MAXIMUM RATING (Ta=25
CHARACTERISTIC
DC Reverse Voltage
Average Forward Current
Peak 1 Cycle Surge Current
Non-Repetitive Reverse 1 Cycle
Surge Current
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
DC
I
F(AV)
I
FSM
I
RSM
T
j
T
stg
RATING
24
30
250 (50Hz)
50
-40 150
-40 150
UNIT
V
A
A
A
DIM
A1
A2
A3
B1
B2
C1
C2
D1
MILLIMETERS
_
10.0 + 0.3
_
13.5 + 0.3
_
24.0 + 0.5
_
8.5 + 0.3
_
10.0 + 0.3
_
2.0 + 0.3
_
5.0 + 0.3
_ 0.3
2.5 +
DIM
D2
D3
E
F
G
H
T
MILLIMETERS
_
5.0 + 0.3
_
4.5 + 0.3
_
1.9 + 0.3
_
9.0 + 0.3
_
1.0 + 0.3
_
4.4 + 0.5
_
0.6 + 0.3
MR
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Zener Voltage
Peak Forward Voltage
Repetitive Peak Reverse Current
Zener Voltage
Temperature Coefficient
Reverse Recovery Time
Temperature Resistance
SYMBOL
V
Z
V
FM
I
RRM
r
Z
t
rr
R
th
TEST CONDITION
I
Z
=10mA
I
FM
=100A
V
RRM
=24V
I
Z
=10mA
I
F
=0.1A, I
R
=0.1A
DC total junction to case
MIN.
24
-
-
23
-
-
TYP.
-
-
-
-
-
-
MAX.
30
1.2
50
36
15
1.0
UNIT
V
V
A
mV/
S
/W
2002. 10. 9
Revision No : 1
C1
G
B2
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
