SEMICONDUCTOR
BCW31/32
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
L
B
L
FEATURES
DIM MILLIMETERS
·Complementary to BCW29/30.
_
+
2.93 0.20
A
B
C
D
E
G
H
J
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
2
3
1
0.95
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
K
L
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
UNIT
V
P
P
M
N
P
0.20 MIN
1.00+0.20/-0.10
7
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
30
20
V
M
5
V
Collector Current
100
mA
mW
℃
1. EMITTER
2. BASE
PC *
Collector Power Dissipation
Junction Temperature
350
3. COLLECTOR
Tj
150
Tstg
Storage Temperature Range
-55∼150
℃
SOT-23
* : Package Mounted On 99.9% Alumina 10×8×0.6mm.
Marking
Lot No.
Lot No.
Type Name
Type Name
D1
D2
BCW31
BCW32
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
TEST CONDITION
MIN.
TYP. MAX. UNIT
IC=10μA
IC=2mA
IE=10μA
30
20
5
-
-
-
-
-
-
-
-
-
-
-
-
V
V
-
V
VCB=30V
VEB=5V
-
100
100
220
450
0.25
0.7
4
nA
nA
IEBO
Emitter Cut-off Current
-
BCW31
BCW32
110
200
-
hFE
VCE=5V, IC=2mA
DC Current Gain
VCE(sat)
VBE(ON)
Cob
IC=10mA, IB=0.5mA
VCE=5V, IC=2mA
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
V
V
0.55
-
VCB=10V, IE=0, f=1MHz
VCE=5V, IC=0.2mA
RS=2kΩ, f=1kHz
Collector Output Capacitance
pF
Noise Figure
NF
-
-
10
dB
2002. 6. 18
Revision No : 2
1/1
KEC [ KEC(KOREA ELECTRONICS) ]