SEMICONDUCTOR
BC849/850
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
E
L
B
L
FEATURES
DIM MILLIMETERS
For Complementary With PNP Type BC859/860.
_
+
2.93 0.20
A
B
C
D
E
G
H
J
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
2
3
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
1
0.95
SYMBOL RATING
UNIT
V
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
K
L
BC849
BC850
BC849
BC850
30
P
P
VCBO
Collector-Base Voltage
M
N
P
0.20 MIN
1.00+0.20/-0.10
7
50
30
VCEO
Collector-Emitter Voltage
V
M
45
VEBO
IC
Emitter-Base Voltage
Collector Current
5
100
V
1. EMITTER
2. BASE
mA
mW
3. COLLECTOR
PC *
Tj
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
350
150
Tstg
-55 150
SOT-23
PC* : Package Mounted On 99.5% Alumina 10
8
0.6mm.
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
V
BC849
BC850
BC849
BC850
30
-
-
-
Collector-Emitter
V(BR)CEO
IC=10mA, IB=0
Breakdown Voltage
Collector-Base
45
-
-
30
-
V(BR)CBO
V
IC=10 A, IE=0
Breakdown Voltage
50
-
-
V(BR)EBO
ICBO
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
5
-
-
V
IE=10 A, IC=0
VCB=30V, IE=0
-
-
15
800
0.7
0.77
0.25
0.6
-
nA
hFE(Note)
IC=2mA, VCE=5V
200
-
VBE(ON)
VBE(ON)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
fT
1
2
1
2
1
2
IC=2mA, VCE=5V
0.58
0.66
-
Base-Emitter Voltage
V
V
V
IC=10mA, VCE=5V
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA, VCE=5V, f=100MHz
VCB=10V, IE=0, f=1MHz
-
-
-
-
-
-
-
-
-
0.09
0.2
0.7
0.9
300
2.5
-
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
-
Transition Frequency
-
MHz
pF
Cob
Collector Output Capacitance
4.5
4.0
1.0
BC849
BC850
IC=200 A, VCE=5V
Rg=10k , f=1kHz
Noise Figure
NF
dB
-
Note : hFE Classification B:200 450, C:420 800
Marking
Lot No.
MARK SPEC
TYPE
BC849B
2B
BC849C
2C
BC850B
2F
BC850C
2G
Type Name
MARK
1999. 11. 30
Revision No : 2
1/1
KEC [ KEC(KOREA ELECTRONICS) ]