SEMICONDUCTOR
BC817W
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
FEATURES
M
B
M
Complementary to BC807W.
DIM MILLIMETERS
_
+
2.00 0.20
A
B
C
D
E
D
2
1
_
1.25+0.15
_
+
0.90 0.10
3
0.3+0.10/-0.05
_
+
2.10 0.20
G
H
J
0.65
0.15+0.1/-0.06
1.30
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
SYMBOL RATING
UNIT
V
K
L
0.00~0.10
0.70
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
50
45
H
M
N
0.42
0.10 MIN
V
N
N
K
5
V
Collector Current
500
mA
mA
mW
1. EMITTER
2. BASE
IE
Emitter Current
-500
100
3. COLLECTOR
PC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Tj
150
USM
Tstg
-55 150
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Collector Cut-off Current
SYMBOL
ICBO
IEBO
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
A
VCB=20V, IE=0
-
-
-
-
-
-
-
-
-
5
0.1
0.1
630
-
VEB=5V, IC=0
Emitter Cut-off Current
A
hFE(1)
hFE(2)
VCE(sat)
VBE
VCE=1V, IC=100mA
VCE=1V, IC=500mA
IC=500mA, IB=50mA
VCE=1V, IC=500mA
VCE=5V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1MHz
100
40
-
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
0.7
1.2
-
V
V
-
fT
Transition Frequency
100
-
MHz
pF
Cob
Collector Output Capacitance
-
Note : hFE(1) Classification 16:100 250 , 25:160 400 , 40:250 630
Marking
Lot No.
MARK SPEC
TYPE
BC817W-16
2M
BC817W-25
2N
BC817W-40
2R
Type Name
MARK
2008. 9. 2
Revision No : 0
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
