SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
・Complementary
to BC817.
2
L
E
B
BC807
EPITAXIAL PLANAR PNP TRANSISTOR
L
3
1
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
*
T
j
T
stg
RATING
-50
-45
-5
-800
800
350
150
-55�½�150
UNIT
V
C
N
P
P
V
V
mA
mA
mW
℃
℃
M
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
A
G
H
1. EMITTER
2. BASE
3. COLLECTOR
K
SOT-23
* : Package Mounted On 99.9% Alumina 10×8×0.6mm.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Note : h
FE
Classification
SYMBOL
I
CBO
I
EBO
h
FE
(1)
h
FE
(2)
V
CE(sat)
V
BE
f
T
C
ob
TEST CONDITION
V
CB
=-20V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-1V, I
C
=-100mA
V
CE
=-1V, I
C
=-500mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-1V, I
C
=-500mA
V
CE
=-5V, I
C
=-10mA, f=100MHz
V
CB
=-10V, I
E
=0, f=1MHz
MIN.
-
-
100
40
-
-
80
-
TYP.
-
-
-
-
-
-
-
9
MAX.
-0.1
-0.1
630
-
-0.7
-1.2
-
-
V
V
MHz
pF
UNIT
μ
A
μ
A
16:100�½�250 , 25:160�½�400 , 40:250�½�630
Marking
J
D
MARK SPEC
TYPE.
MARK
BC807-16
5A
BC807-25
5B
BC807-40
5C
Type Name
Lot No.
2009. 2. 19
Revision No : 5
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
