SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
・Complementary
to BC817W.
A
J
M
E
B
BC807W
EPITAXIAL PLANAR PNP TRANSISTOR
M
D
3
2
1
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
T
j
T
stg
RATING
-50
-45
-5
-500
500
100
150
-55�½�150
UNIT
L
V
V
V
mA
mA
mW
℃
℃
H
N
K
N
DIM
A
B
C
D
E
G
H
J
K
L
M
N
MILLIMETERS
_
2.00 + 0.20
_
1.25 + 0.15
_
0.90 + 0.10
0.3+0.10/-0.05
_
2.10 + 0.20
0.65
0.15+0.1/-0.06
1.30
0.00~0.10
0.70
0.42
0.10 MIN
C
G
1. EMITTER
2. BASE
3. COLLECTOR
USM
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Note : h
FE
Classification
SYMBOL
I
CBO
I
EBO
h
FE
(1)
h
FE
(2)
V
CE(sat)
V
BE
f
T
C
ob
TEST CONDITION
V
CB
=-20V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-1V, I
C
=-100mA
V
CE
=-1V, I
C
=-500mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-1V, I
C
=-500mA
V
CE
=-5V, I
C
=-10mA, f=100MHz
V
CB
=-10V, I
E
=0, f=1MHz
MIN.
-
-
100
40
-
-
80
-
TYP.
-
-
-
-
-
-
-
9
MAX.
-0.1
-0.1
630
-
-0.7
-1.2
-
-
V
V
MHz
pF
UNIT
μ
A
μ
A
16:100�½�250 , 25:160�½�400 , 40:250�½�630
Marking
MARK SPEC
TYPE.
MARK
BC807W-16
1M
BC807W-25
1N
BC807W-40
Type Name
Lot No.
1R
2008. 9. 2
Revision No : 0
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
