SEMICONDUCTOR
BC549/550
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
LOW NOISE AMPLIFIER APPLICATION.
B
C
FEATURE
For Complementary with PNP Type BC559/560.
DIM MILLIMETERS
N
A
B
C
D
E
4.70 MAX
4.80 MAX
3.70 MAX
0.45
E
K
D
G
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
SYMBOL
VCBO
RATING
UNIT
V
1.00
F
1.27
BC549
BC550
BC549
BC550
30
50
G
H
J
0.85
Collector-Base Voltage
0.45
_
H
14.00 +0.50
K
L
0.55 MAX
2.30
F
F
30
VCEO
M
N
0.45 MAX
1.00
Collector-Emitter Voltage
V
45
3
1
2
VEBO
IC
Emitter-Base Voltage
Collector Current
5
V
1. COLLECTOR
2. BASE
100
625
150
-55 150
mA
mW
3. EMITTER
PC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Tj
TO-92
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
V
BC549
BC550
BC549
BC550
30
45
30
50
5.0
-
-
-
-
Collector-Emitter
V(BR)CEO
IC=10mA, IB=0
Breakdown Voltage
-
-
-
Collector-Base
V(BR)CBO
V
IC=10 A, IE=0
Breakdown Voltage
-
-
V(BR)EBO
ICBO
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
-
-
V
IE=10 A, IC=0
VCB=30V, IE=0
-
15
800
0.7
0.6
-
nA
hFE(Note)
VBE(ON)
VCE(sat)
VBE(sat)
fT
IC=2mA, VCE=5V
IC=2mA, VCE=5V
IC=100mA, IB=5mA
IC=100mA, IB=5mA
110
0.55
-
-
Base-Emitter Voltage
-
V
V
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
-
0.9
300
-
-
V
IC=10mA, VCE=5V, f=100MHz
VCB=10V, IE=0, f=1MHz
-
-
MHz
pF
Cob
Collector Output Capacitance
-
4.5
4.0
10
BC549
BC550
-
-
IC=200 A, VCE=5V
Rg=10k , f=1kHz
Noise Figure
NF
dB
-
-
Note : hFE Classification A:110 220, B:200 450, C:420 800
1999. 11. 30
Revision No : 2
1/1
KEC [ KEC(KOREA ELECTRONICS) ]