SEMICONDUCTOR
BC338
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B
C
FEATURES
High Current : IC=800mA.
DC Current Gain : hFE=100 630 (VCE=1V, Ic=100mA).
For Complementary with PNP type BC328.
DIM MILLIMETERS
N
A
B
C
D
E
4.70 MAX
4.80 MAX
3.70 MAX
0.45
E
K
D
G
1.00
F
1.27
G
H
J
0.85
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
0.45
_
H
14.00 +0.50
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
30
UNIT
V
K
L
0.55 MAX
2.30
F
F
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
M
N
0.45 MAX
1.00
3
1
2
25
V
1. COLLECTOR
2. BASE
5
V
Collector Current
800
mA
mA
mW
3. EMITTER
IE
Emitter Current
-800
625
PC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
TO-92
Tj
150
Tstg
-55 150
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Collector Cut-off Current
SYMBOL
ICBO
hFE
TEST CONDITION
MIN.
TYP.
MAX.
100
630
0.7
1.2
-
UNIT
nA
VCB=25V, IE=0
-
-
-
VCE=1V, IC=100mA
IC=500mA, IB=50mA
VCE=1V, IC=300mA
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
100
VCE(sat)
VBE(ON)
fT
-
-
-
-
-
V
V
-
VCE=5V, IC=-10mA, f=100MHz
VCB=10V, f=1MHz, IE=0
Transition Frequency
100
12
MHz
pF
Cob
Collector Output Capacitance
-
Note : hFE Classification none:100 630, 16:100 250, 25:160 400, 40:250 630
2000. 2. 28
Revision No : 2
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
