SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION
FEATURES
・Small
Package : SOT-23.
・Low
Forward Voltag : V
F
=0.9V(Typ.).
・Fast
Reverse Recovery Time : t
rr
=1.6ns(Typ.).
A
G
L
E
B
BAV70
SILICON EPITAXIAL PLANAR DIODE
L
DIM
A
2
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
・Small
Total Capacitance : C
T
=0.9pF(Typ.).
3
D
B
C
D
E
G
H
J
K
H
1
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Continuous Forward Current
Surge Current (10ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V
RM
V
R
I
F
I
FSM
P
D
T
j
T
stg
RATING
85
80
250
2
225*
mW
300**
150
-55�½�150
℃
℃
UNIT
V
V
mA
A
C
N
P
P
L
M
N
P
M
3
1. ANODE 1
2. ANODE 2
3. CATHODE
2
1
K
SOT-23
* Note1 : Package Mounted On FR-5 Board (25.4×19.05×1.57mm)
** Note2 : Package Mounted On 99.5% Alumina (10×8×0.6mm)
Marking
J
Lot No.
Type Name
H7
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
V
F(1)
Forward Voltage
V
F(2)
V
F(3)
Reverse Current
Total Capacitance
Reverse Recovery Time
I
R
C
T
t
rr
I
F
=1mA
I
F
=10mA
I
F
=150mA
V
R
=80V
V
R
=0, f=1MHz
I
F
=10mA
TEST CONDITION
MIN.
-
-
-
-
-
-
TYP.
0.60
0.72
-
-
-
-
MAX.
-
-
1.25
0.5
3.0
4.0
μ
A
pF
nS
V
UNIT
2009. 1. 23
Revision No : 1
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
