SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES
・ESD
Protected 2000V.
・High
density cell design for low R
DS(ON)
.
・Voltage
controlled small signal switch.
A
G
L
2N7002KA
N Channel MOSFET
ESD Protected 2000V
E
B
L
DIM
A
D
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
_
2.93+ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
・Rugged
and reliable.
・High
saturation current capablity.
2
3
H
1
P
P
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
Continuous
Drain Current
Pulsed (Note 1)
Drain Power Dissipation (Note 2)
Junction Temperature
Storage Temperature Range
SYMBOL
V
DSS
V
GSS
I
D
I
DP
P
D
T
j
T
stg
RATING
60
±20
300
UNIT
V
M
1. SOURCE
V
mA
2. GATE
3. DRAIN
1200
350
150
-55�½�150
mW
℃
℃
K
SOT-23
Note 1) Pulse Width≤10㎲, Duty Cycle≤1%
Note 2) Package mounted on 99% Alumina 10×8×0.6mm
EQUIVALENT CIRCUIT
D
Marking
Lot No.
Type Name
G
2P
S
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
ESD-Capability*
SYMBOL
BV
DSS
I
DSS
I
GSSF
I
GSSR
-
TEST CONDITION
V
GS
=0V, I
D
=10μ
A
V
DS
=60V, V
GS
=0V
V
GS
=20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
C=100pF, R=1.5KΩ
Both forward and reverse
direction 3 pulse
*Failure cirterion : I
DSS
> 1μ at V
DS
=60V, I
GSSF
>10μ at V
GS
=20V, I
GSSR
>-10μ at V
GS
=-20V.
A
A
A
MIN.
60
-
-
-
2000
TYP.
-
-
-
-
-
MAX.
-
1
10
-10
-
UNIT
V
μ
A
μ
A
μ
A
V
2011. 4. 4
Revision No : 1
J
MAXIMUM RATING (Ta=25℃)
C
N
1/3
KEC [ KEC(KOREA ELECTRONICS) ]
