2N7000K
SEMICONDUCTOR
N Channel MOSFET
ESD Protected 2000V
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
B
C
FEATURES
ESD Protected 2000V.
High density cell design for low RDS(ON)
Voltage controlled small signal switch.
Rugged and reliable.
.
DIM MILLIMETERS
N
A
B
C
D
E
4.70 MAX
4.80 MAX
3.70 MAX
0.45
E
K
D
High saturation current capablity.
G
1.00
F
1.27
G
H
J
0.85
0.45
_
14.00+0.50
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
H
K
L
0.55 MAX
2.30
F
F
SYMBOL
VDSS
VGSS
ID
RATING
60
UNIT
V
M
0.45 MAX
1.00
N
Drain-Source Voltage
3
1
2
Gate-Source Voltage
V
20
500
1. SOURCE
2. GATE
Continuous
Drain Current
3. DRAIN
mA
Pulsed (Note 1)
IDP
2000
625
PD
Drain Power Dissipation
Junction Temperature
mW
TO-92
Tj
150
Tstg
Storage Temperature Range
-55 150
Note 1) Pulse Width 10 , Duty Cycle 1%
EQUIVALENT CIRCUIT
D
G
S
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
SYMBOL
BVDSS
IDSS
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
60
-
-
-
-
-
-
V
VGS=0V, ID=10 A
VDS=60V, VGS=0V
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
1
A
IGSSF
-
10
-10
A
A
IGSSR
-
2009. 11. 17
Revision No : 1
1/4
KEC [ KEC(KOREA ELECTRONICS) ]
