SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES
High density cell design for low R
DS(ON)
.
Voltage controlled small signal switch.
Rugged and reliable.
A
G
L
2N7002
N CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
E
B
L
DIM
A
D
B
C
D
E
G
H
J
K
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
High saturation current capablity.
2
3
H
1
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
Continuous
Drain Current
)
SYMBOL
V
DSS
V
GSS
I
D
I
DP
P
D
T
j
T
stg
1%
1mm)
RATING
60
20
300
mA
1200
300
150
-55 150
mW
UNIT
V
V
C
N
P
P
L
M
N
P
M
1. SOURCE
2. GATE
3. DRAIN
Pulsed
(Note 1)
Drain Power Dissipation
(Note 2)
Junction Temperature
Storage Temperature Range
Note 1) Pulse Width 10
, Duty Cycle
K
SOT-23
Note 2) Package mounted on a glass epoxy PCB(100mm
2
EQUIVALENT CIRCUIT
D
Marking
G
J
Lot No.
Type Name
S
WA
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
SYMBOL
BV
DSS
I
DSS
I
GSSF
I
GSSR
TEST CONDITION
V
GS
=0V, I
D
=10 A
V
DS
=60V, V
GS
=0V
V
GS
=20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
MIN.
60
-
-
-
TYP.
-
-
-
-
MAX.
-
1
100
-100
UNIT
V
A
nA
nA
2009. 11. 17
Revision No : 4
1/4
KEC [ KEC(KOREA ELECTRONICS) ]
