SEMICONDUCTOR
2N7002KE
N Channel MOSFET
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES
E
B
· ESD Protected 2000V.(Human Body Model)
· High density cell design for low RDS(ON)
· Voltage controlled small signal switch.
· High-speed line driver.
.
D
2
1
DIM MILLIMETERS
_
A
B
C
D
E
G
H
J
1.60+0.20
3
_
+
0.85 0.10
· Low-side loadswitch.
_
+
0.70 0.10
0.27+0.10/-0.05
_
1.60+0.10
_
+
1.00 0.10
0.50
_
0.13+0.05
J
1. SOURCE
2. GATE
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
3. DRAIN
SYMBOL
VDSS
VGSS
ID
RATING
60
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
V
±20
300
ESM
Continuous
Drain Current
mA
Pulsed (Note 1)
IDP
1000
300
Drain Power Dissipation (Note 2)
Junction Temperature
PD
mW
℃
Tj
150
Tstg
Storage Temperature Range
-55∼ 150
416
℃
Thermal Resistance, Junction to Ambient (Note 2)
℃/W
RthJA
Note 1) Pulse Width≦10㎲, Duty Cycle≦1%
Note 2) Surface Mounted on 2 ×2 FR4 Board
EQUIVALENT CIRCUIT
D
Marking
Type Name
KE
G
S
2013. 7. 19
Revision No : 1
1/4
KEC [ KEC(KOREA ELECTRONICS) ]
