SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES
・ESD
Protected 2000V.
・High
density cell design for low R
DS(ON)
.
A1
2N7002KDU
N Channel MOSFET
ESD Protected 2000V
B
B1
・Voltage
controlled small signal switch.
A
1
C
2
C
3
6
5
4
D
・Rugged
and reliable.
・High
saturation current capablity.
DIM
A
A1
B
B1
C
D
G
H
MILLIMETERS
_
2.00 + 0.20
_
1.3 + 0.1
_
2.1 + 0.1
_
1.25 + 0.1
0.65
0.2+0.10/-0.05
0-0.1
_
0.9 + 0.1
0.15+0.1/-0.05
H
T
G
T
MAXIMUM RATING
(Ta=25℃)
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
Continuous
Drain Current
Pulsed
(Note 1)
Drain Power Dissipation
(Note 2)
Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
(Note 2)
Note 1) Pulse Width≦10㎲, Duty Cycle≦1%
Note 2) Surface Mounted on 2
×2
FR4 Board
I
DP
P
D
T
j
T
stg
R
thJA
1200
270
150
-55½150
460
mW
℃
℃
℃/W
SYMBOL RATING
V
DSS
V
GSS
I
D
60
±20
300
mA
UNIT
V
V
1.
2.
3.
4.
5.
6.
Q
1
Q
1
Q
2
Q
2
Q
2
Q
1
SOURCE
GATE
DRAIN
SOURCE
GATE
DRAIN
US6
EQUIVALENT CIRCUIT
Marking
6
5
4
6
5
4
Lot No.
Type Name
DU
1
2
3
1
2
3
2013. 7. 19
Revision No : 1
1/4
KEC [ KEC(KOREA ELECTRONICS) ]
