SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES
・High
density cell design for low R
DS(ON)
.
・Voltage
controlled small signal switch.
・Rugged
and reliable.
A
G
2N7002A
N CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
L
E
B
L
・High
saturation current capablity.
2
H
3
1
Q
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Drain-Source Voltage
Drain-Gate Voltage (R
GS
≤1㏁)
Gate-Source Voltage
Continuous
Drain Current
Pulsed
Drain Power Dissipation
Junction Temperature
Storage Temperature Range
I
DP
P
D
T
j
T
stg
800
200
150
-55½150
mW
℃
℃
SYMBOL
V
DSS
V
DGR
V
GSS
I
D
RATING
60
60
±20
115
mA
UNIT
V
V
V
C
N
P
P
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
Q
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
0.1 MAX
K
M
1. SOURCE
2. GATE
3. DRAIN
SOT-23
Marking
EQUIVALENT CIRCUIT
Type Name
Lot No.
WB
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
SYMBOL
BV
DSS
I
DSS
I
GSSF
I
GSSR
TEST CONDITION
V
GS
=0V, I
D
=10μ
A
V
DS
=60V, V
GS
=0V
V
GS
=20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
MIN.
60
-
-
-
TYP.
-
-
-
-
MAX.
-
1
1
-1
UNIT
V
μ
A
μ
A
μ
A
2009. 11. 17
Revision No : 8
J
D
1/4
KEC [ KEC(KOREA ELECTRONICS) ]
