SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
HIGH VOLTAGE APPLICATION.
L
2N5551S
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
L
FEATURES
High Collector Breakdwon Voltage
A
Low Leakage Current.
: I
CBO
=50nA(Max.) V
CB
=120V
Low Saturation Voltage
: V
CE(sat)
=0.2V(Max.) I
C
=50mA, I
B
=5mA
C
G
: V
CBO
=180V, V
CEO
=160V
2
3
1
P
P
N
Low Noise : NF=8dB (Max.)
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
H
M
1. EMITTER
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
RATING
180
160
6
600
100
350
150
-55 150
0.6 )
UNIT
V
V
V
mA
mA
mW
2. BASE
3. COLLECTOR
K
SOT-23
Marking
Lot No.
Note : * Package Mounted On 99.5% Alumina 10 8
Type Name
ZF
1999. 11. 30
Revision No : 2
J
D
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
