SEMICONDUCTOR
2N5400S
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
HIGH VOLTAGE APPLICATION.
E
L
B
L
DIM MILLIMETERS
FEATURES
_
+
2.93 0.20
A
B
C
D
E
G
H
J
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
High Collector Breakdwon Voltage
: VCBO=-130V, VCEO=-120V
Low Leakage Current.
2
3
1
0.95
: ICBO=-100nA(Max.) @VCB=-100V
Low Saturation Voltage
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
K
L
P
P
: VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA
Low Noise : NF=8dB (Max.)
M
N
P
0.20 MIN
1.00+0.20/-0.10
7
M
1. EMITTER
2. BASE
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
3. COLLECTOR
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
-130
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-120
V
SOT-23
-5
V
-600
mA
mA
mW
IB
Base Current
-100
PC *
Tj
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
350
150
Marking
Lot No.
Tstg
-55 150
Note : * Package Mounted On 99.5% Alumina 10
8
0.6
)
Type Name
ZN
1999. 11. 30
Revision No : 2
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
