SEMICONDUCTOR
2N3906A
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B
C
FEATURES
Low Leakage Current
DIM MILLIMETERS
N
: ICEX=-50nA(Max.), IBL=-50nA(Max.)
@VCE=-30V, VEB=-3V.
A
B
C
D
E
4.70 MAX
4.80 MAX
3.70 MAX
0.45
E
K
D
G
Low Saturation Voltage
1.00
: VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.
Low Collector Output Capacitance
: Cob=4.5pF(Max.) @VCB=5V.
Complementary to 2N3904A.
F
1.27
G
H
J
0.85
0.45
_
H
14.00 +0.50
K
L
0.55 MAX
2.30
F
F
M
0.45 MAX
1.00
N
3
1
2
1. EMITTER
2. BASE
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
)
3. COLLECTOR
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
-40
UNIT
V
TO-92
-40
V
-5
V
-200
-50
mA
mA
mW
W
IB
Base Current
625
Ta=25
Tc=25
Collector Power
Dissipation
PC
1.5
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-55 150
2002. 2. 1
Revision No : 0
1/5
KEC [ KEC(KOREA ELECTRONICS) ]
