R
3TT12Z/C/J/F
绝对最大额定值 ABSOLUTE RATINGS (TC=25℃)
项
目
符 号
试 验 条 件
Condition
数 值 单位
Parameter
重复峰值断态电压
Symbol
Value Unit
±600
V
VDRM
Repetitive peak off-state voltage
±800
通态方均根电流On-state RMS current
IT(RMS) full sine wave
full sine wave ,t=20ms
12
A
A
A
非重复浪涌峰值通态电流 Non-
150
ITSM
repetitive surge peak on-state current
full sine wave ,t=16.7ms
t=10ms
161
112.5 A2s
I2t
通态电流临界上升率 Repetitive rate of
ITM=20A, IG=0.2A,
dIG/dt=0.2A/μs
dI/dt
100 A/μs
rise of on-state current after triggering
峰值门极电流 Peak gate current
峰值门极电压 Peak gate voltage
峰值门极功率 Peak gate power
平均门极功率 Average gate power
IGM
VGM
PGM
2
5
A
V
5
W
W
PG(AV) over any 20ms period
0.5
存储温度
Storage temperature
Tstg
TVJ
-40~150 ℃
125
操作结温Operation junction temperature
℃
版本：201511H
2/9
JSMC [ JILIN SINO-MICROELECTRONICS CO., LTD. ]
