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2SC5200-O-AB-N-B 参数 Datasheet PDF下载

2SC5200-O-AB-N-B图片预览
型号: 2SC5200-O-AB-N-B
PDF下载: 下载PDF文件 查看货源
内容描述: [Silicon NPN Triple Diffused Transistor]
分类和应用:
文件页数/大小: 8 页 / 571 K
品牌: JSMC [ JILIN SINO-MICROELECTRONICS CO., LTD. ]
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2SC5200 SERIES  
特征曲线 ELECTRICAL CHARACTERISTICS (2SC5200C curves)  
DC Current Gain  
Base-Emitter Voltage  
Tc=100  
Tc=25  
Tc=25  
Common emitter  
Tc=100℃  
IC/IB = 5  
Common emitter  
Single pulse test  
VCE = 5 V Single pulse test  
Collector corrent IC (A)  
Collector corrent IC (A)  
Saturation Voltage  
Common emitter  
IC/IB = 5  
Single pulse test  
Tc=100℃  
Tc=25℃  
Collector corrent IC (A)  
Power Derating  
Safe Operating Area  
TC=25DC Operation  
1ms  
10ms  
Infinite heat sink  
100ms  
Single nonrepetitive pulse Tc = 25°C  
Curves must be derated linear  
with increase in temperature.  
Case temperature TC(℃)  
Collector-emitter voltage VCE (V)  
版本:201603A  
6/8  
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