JMnic
Product Specification
Silicon NPN Power Transistors
2SC4300
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
IC=10mA; IB=0
MIN
TYP.
MAX
UNIT
V
800
IC=2A;IB=0.4A
0.5
1.2
100
100
30
V
IC=2A;IB=0.4A
V
VCB=800V; IE=0
VEB=7V; IC=0
μA
μA
IEBO
hFE
DC current gain
IC=2A ; VCE=4V
IE=-0.5A ; VCE=12V
VCB=10V;f=1MHz
10
fT
Transition frequency
6
MHz
pF
COB
Output capacitance
75
Switching times
ton
tstg
tf
Turn-on time
1
5
1
μs
μs
μs
IC=2A;IB1=0.3A;IB2=-1A;
RL=125Ω;VCC=250V
Storage time
Fall time
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
