Product Specification
www.jmnic.com
Silicon NPN Power Transistor
2SC3835
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@ IC=3A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V (Min)
·Good Linearity of hFE
APPLICATIONS
·Designed for use in humidifier , DC/DC converter and
general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
V
200
120
V
8
V
Collector Current-Continuous
Collector Current-Pulse
Base Current-Continuous
7
14
A
ICM
A
IB
3
A
Collector Power Dissipation
@ TC=25℃
PC
70
W
℃
℃
TJ
Junction Temperature
150
-55~150
Storage Temperature Range
Tstg
1
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
