JMnic
Product Specification
Silicon NPN Power Transistors
2SC2792
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
CONDITIONS
MIN
800
850
TYP.
MAX
UNIT
V
IC=10mA ,IB=0
IC=1mA ,IE=0
V
IC=500mA; IB=50mA
IC=500mA; IB=50mA
VCB=800V; IE=0
VEB=7V; IC=0
1.0
1.5
100
1.0
V
V
μA
mA
IEBO
Emitter cut-off current
hFE
DC current gain
IC=0.5A ; VCE=5V
10
Switching times
tr
tstg
tf
Rise time
1.0
4.0
1.0
μs
μs
μs
VCC=400V; 2IB1=-IB2=0.1A;
RL=800Ω
Storage time
Fall time
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
