JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SC2275 2SC2275A
MIN
TYP.
MAX
UNIT
2SC2275
V
(BR)CEO
Collector-emitter
breakdown voltage
2SC2275A
I
C
=25mA ,I
B
=0
120
V
150
V
CEsat
Collector-emitter saturation voltage
I
C
=1A; I
B
=0.1A
2.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=1A; I
B
=0.1A
1.5
V
I
CBO
Collector cut-off current
V
CB
=120V; I
E
=0
1.0
μA
I
EBO
Emitter cut-off current
V
EB
=3V; I
C
=0
1.0
μA
h
FE-1
DC current gain
I
C
=5mA ; V
CE
=5V
35
h
FE-2
DC current gain
I
C
=0.3A ; V
CE
=5V
60
150
320
C
OB
Output capacitance
I
E
=0 ; V
CB
=10V,f=1MHz
19
pF
f
T
Transition frequency
I
C
=0.2A ; V
CE
=5V
200
MHz
h
FE-2
Classifications
R
60-120
Q
100-200
P
160-320
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
