JMnic
Product Specification
Silicon PNP Power Transistors
2SB966
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=-25mA ;IB=0
-120
IC=-5A ;IB=-0.5A
IC=-5A ;IB=-0.5A
VCB=-120V; IE=0
VEB=-5V; IC=0
-1.5
-2.0
-50
V
V
μA
μA
IEBO
-50
hFE -1
hFE -2
COB
DC current gain
IC=-1A ; VCE=-5V
IC=-5A ; VCE=-5V
IE=0 ; VCB=-10V;f=1MHz
IC=-1A ; VCE=-5V
60
20
320
DC current gain
Output capacitance
200
65
pF
fT
Transition frequency
MHz
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
