JMnic
Product Specification
Silicon PNP Power Transistors
2SB942 2SB942A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
-60
-80
TYP.
MAX
UNIT
2SB942
Collector-emitter
voltage
VCEO
IC=-30mA ,IB=0
V
2SB942A
VCEsat
VBE
Collector-emitter saturation voltage
Base-emitter voltage
IC=-4A, IB=-0.4A
IC=-3A ; VCE=-4V
VEB=-5V; IC=0
-1.5
-2
V
V
IEBO
Emitter cut-off current
-1
mA
2SB942
VCE=-30V; IB=0
Collector
ICEO
-0.7
mA
mA
cut-off current
2SB942A
VCE=-60V; IB=0
2SB942
VCE=-60V; VBE=0
VCE=-80V; VBE=0
IC=-1A ; VCE=-4V
IC=-3A ; VCE=-4V
IC=-0.1A; VCE=-10V,f=10MHz
Collector
cut-off current
ICES
-0.4
250
2SB942A
hFE-1
hFE-2
fT
DC current gain
DC current gain
Transition frequency
70
15
30
MHz
Switching times
ton
tstg
tf
Turn-on time
0.2
0.5
0.2
μs
μs
μs
IC=-4A
IB1=-0.4A ,IB2=0.4A
Storage time
Fall time
hFE-1 Classifications
Q
P
70-150
120-250
2