JMnic
Product Specification
Silicon PNP Power Transistor
2SB885
DESCRIPTION
・With
TO-220C package
・DARLINGTON
・High
DC durrent gain
・Low
collector saturation voltage
・Complement
to type 2SD1195
APPLICATIONS
・For
motor drivers,printer hammer
drivers,relay drivers,voltage regulator
control applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-DC
Collector current-Pulse
T
C
=25℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
1.75
150
-55~150
℃
℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-110
-100
-6
-5
-8
35
W
UNIT
V
V
V
A
A