JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=-1mA ;R
BE
=∞
I
C
=-1mA ;I
E
=0
I
E
=-1mA ;I
C
=0
I
C
=-6A;I
B
=-0.3A
V
CB
=-40V;I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-1A ; V
CE
=-2V
I
C
=-5A ; V
CE
=-2V
I
C
=-1A ; V
CE
=-5V
70
30
10
MIN
-50
-60
-6
TYP.
2SB826
MAX
UNIT
V
V
V
-0.5
-0.1
-0.1
280
V
mA
mA
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=5.0A ;I
B1
=- I
B2
=0.5A
0.2
0.1
0.4
μs
μs
μs
h
FE-1
classifications
Q
70-140
R
100-200
S
140-280
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
