JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SB649
I
C
=-10mA; R
BE
=∞
2SB649A
2SB649
I
C
=-1m A ;I
E
=0
2SB649A
I
E
=-1mA ;I
C
=0
I
C
=-0.5A ;I
B
=-50mA
I
C
=-150mA ; V
CE
=5V
V
CB
=-160V; I
E
=0
2SB649
h
FE-1
DC current gain
2SB649A
h
FE-2
f
T
C
OB
DC current gain
Transition frequency
Collector output capacitance
I
C
=-0.5A ; V
CE
=-5V
I
C
=-150mA ; V
CE
=-5V
f=1MHz ; V
CB
=-10V
I
C
=-150mA ; V
CE
=-5V
CONDITIONS
2SB649 2SB649A
MIN
-120
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
V
-160
-180
V
-180
-5
-1.0
-1.5
-10
60
60
30
140
27
MHz
pF
320
200
V
V
V
μA
V
(BR)CBO
Collector-base
breakdown voltage
V
(BR)EBO
V
CEsat
V
BE
I
CBO
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
h
FE
Classifications
h
FE-1
2SB649
2SB649A
B
60-120
60-120
C
100-200
100-200
D
160-320
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
