JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown votage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=-50mA; R
BE
=∞
I
C
=-5mA; I
E
=0
I
E
=-5mA; I
C
=0
I
C
=-4A;I
B
=-0.4 A
I
C
=-1A ; V
CE
=-5V
V
CB
=-40V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-1A ; V
CE
=-5V
I
C
=-3A ; V
CE
=-5V
I
C
=-1A ; V
CE
=-5V
I
E
=0; V
CB
=-10V;f=1MHz
40
20
15
150
MIN
-85
-100
-6
TYP.
2SB633
MAX
UNIT
V
V
V
-2.0
-1.5
-0.1
-0.1
320
V
V
mA
mA
MHz
pF
h
FE-1
classifications
C
40-80
D
60-120
E
100-200
F
160-320
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
