JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Collector output capacitance
Transition frequency
CONDITIONS
I
C
=-50mA; I
B
=0
I
C
=-4A; I
B
=-0.4A
I
C
=-4A; I
B
=-0.4A
V
CB
=-70V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-1V
I
C
=-4A ; V
CE
=-1V
I
E
=0 ; V
CB
=-10V; f=1MHz
I
C
=-1A ; V
CE
=-4V
70
30
250
10
MIN
-50
-0.2
-0.9
TYP.
2SB553
MAX
UNIT
V
-0.4
-1.2
-30
-50
240
V
V
μA
μA
pF
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
B1
=-I
B2
=-0.3A; V
CC
≈-30V
R
L
=10Ω
0.2
2.5
0.5
μs
μs
μs
h
FE-1
Classifications
O
70-140
Y
120-240
2