JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SB1548
I
C
=-30mA ; I
B
=0
2SB1548A
I
C
=-3A ;I
B
=-0.375A
I
C
=-3A ; V
CE
=-4V
2SB1548
2SB1548A
2SB1548
2SB1548A
V
CB
=-60V; I
E
=0
CONDITIONS
2SB1548 2SB1548A
MIN
-60
TYP.
MAX
UNIT
V
CEO
Collector-emitter
voltage
V
-80
-1.2
-1.8
V
V
V
CEsat
V
BE
Collector-emitter saturation voltage
Base-emitter voltage
I
CBO
Collector
cut-off current
-200
V
CB
=-80V; I
E
=0
V
CE
=-30V; I
B
=0
-300
V
CE
=-60V; I
B
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-4V
I
C
=-3A ; V
CE
=-4V
I
C
=-0.5A ; V
CE
=-10V
70
10
30
-1
250
μA
I
CEO
Collector
cut-off current
μA
I
EBO
h
FE-1
h
FE-2
f
T
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
mA
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=-1.0A I
B1
=-I
B2
=-0.1A
0.5
1.2
0.3
μs
μs
μs
h
FE-1
Classifications
Q
70-150
P
120-250
2